Understanding Rectifier Diodes: ES2J, RS3M, SS310, SS510 Comparison for Power Circuits
In every power stage — AC/DC front end, DC/DC conversion, LED driver output, telecom DC rail, and motor drive feedback — the rectifier diode directly impacts conversion efficiency, junction temperature, and long-term reliability. An unsuitable diode can waste power as heat, reduce thermal margin, and shorten service life in the field. The first design decision in rectifier diode selection is typically: “fast recovery or Schottky?”. These two categories behave very differently under reverse recovery stress, surge events, and operating temperature. Fast Recovery Rectifiers (ES2J, RS3M) Schottky Barrier Rectifiers (SS310, SS510) Rule of thumb: Use fast recovery when you require high-voltage robustness and stable thermal behavior. Use Schottky when you need low forward loss and ultra-fast switching in low-voltage power paths (≤ 100 V). High-voltage rails (≥ 400 V): ES2J or RS3M provide the reverse blocking margin. SS510 (5 A) supports heavier load current and strong surge (IFSM 100 A). Fast recovery diodes are suitable for tens to hundreds of kHz switching. All listed devices specify RθJL below 20 °C/W, enabling efficient heat flow into the PCB / copper plane in SMB/SMC packages. Fast Recovery (ES2J, RS3M) Schottky (SS310, SS510) Thermal / Surge Stability Selecting by VRRM, IF(AV), VF, and trr is a direct way to increase power efficiency, maintain thermal margin, and extend field reliability in next-generation power systems. For full electrical characteristics and rectifier diode datasheets (fast recovery, fast switching, Schottky barrier / low VF), please contact Suntan. Our engineering team supports part selection, thermal evaluation, and form-fit-function replacement for power supply design, telecom modules, LED lighting, and industrial control.
PN-junction devices with controlled minority carrier lifetime. They provide fast reverse recovery while maintaining high reverse voltage capability (up to the 600 V – 1000 V class). Typical use: PFC stages, inverters, industrial motor control feedback paths, high-voltage rails.
Metal–semiconductor junction. Very low charge storage, extremely fast switching, and a low forward voltage drop (often ~0.55–0.85 V). This low VF directly reduces conduction loss in low-voltage, high-frequency rails such as SMPS secondary rectifiers, LED driver outputs, and telecom DC distribution.
Model Type VRRM (V) IF(AV) (A) VF (V) @ rated current trr (ns) IFSM (A) RθJL (°C/W) Package ES2J Super Fast 600 2.0 1.25 35 50 17 DO-214AA (SMB) RS3M Fast Switching 1000 3.0 1.30 150–500 100 15 DO-214AB (SMC) SS310 Schottky Barrier 100 3.0 0.85 — 80 12 DO-214AB (SMC) SS510 Schottky Barrier 100 5.0 0.85 — 100 12 DO-214AB (SMC)
RS3M supports up to 1000 V, used in industrial control and inverter applications.
SS310 / SS510 offer low forward drop (~0.55–0.85 V class) and high switching efficiency, helping reduce thermal loss in compact SMPS output stages.
Operating Voltage (VRRM)
Low-voltage outputs (≤ 100 V): SS310 or SS510 minimize forward loss on the secondary side.Average Forward Current (IF(AV))
ES2J (2 A) and RS3M (3 A) fit compact power modules, feedback paths, and general rectification stages.Switching Frequency
Schottky diodes excel in MHz-range SMPS outputs thanks to negligible reverse recovery charge.Thermal Management
Schottky parts naturally run cooler at the same load because of lower VF.
High reverse voltage capability and controlled reverse recovery. Typical in PFC stages, inverter feedback loops, and industrial control.
Low forward voltage and minimal switching loss. Ideal for SMPS secondary rectification, LED drivers, and telecom DC rails where low VF = lower heat.
All four Suntan parts show stable thermal resistance and strong surge capability (IFSM), supporting long service life in compact SMD designs.







